EFFECT OF NATIVE POINT-DEFECTS ON MORPHOLOGY OF GETTERING CENTERS IN CZ-SILICON WAFERS

Authors
ENISHERLOVA KL RUSAK TF MILVIDSKII MG REZNICK VJ
Citation
Kl. Enisherlova et al., EFFECT OF NATIVE POINT-DEFECTS ON MORPHOLOGY OF GETTERING CENTERS IN CZ-SILICON WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 120-124
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
120 - 124
Database
ISI
SICI code
0921-5107(1996)36:1-3<120:EONPOM>2.0.ZU;2-S
Abstract
The influence of native point defect concentration on oxygen precipita tion processes in Si-O-i system has been investigated. The supersatura tion degree of native point defects in the bulk of the silicon wafers was varied by changing the conditions of the preliminary oxidation. It has been shown supersaturation of a certain type of native point defe ct can retard the oxygen precipitation process and change the picture of defect formation.