COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES

Authors
NTSOENZOK E DESGARDIN P BARBOT JF VERNOIS J ISABELLE DB
Citation
E. Ntsoenzok et al., COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 154-157
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
154 - 157
Database
ISI
SICI code
0921-5107(1996)36:1-3<154:CONAPS>2.0.ZU;2-6
Abstract
We irradiated N- and P-type silicon with 1.5 MeV protons at fluences o f 10(12), 10(13) and 10(14)cm(-2). After irradiation, the irradiated s amples were studied by the spreading resistance method in order to det ermine the profiles of the defects before and after different thermal annealings. The measurements were performed as a function of annealing temperature and time. While P- and N-type silicon present the same be haviour after irradiation, many differences arise after annealing. In particular, the N-type samples show a conductivity layer at the end of the proton range (Rp) unlike the P-type samples.