INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON

The influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon is studied by deep level transient spe ctroscopy (DLTS), correlated with photoluminescence (PL) analyses. N()p silicon diodes with interstitial oxygen content between 10(16) cm(- 3) and 10(18) cm(-3) and carbon content below 10(16) cm(-3), are irrad iated by 2 MeV electrons with fluences ranging from 5 x 10(14) cm(-2) to 10(16) cm(-2). The DLTS spectra reveal two hole traps characterised by an activation energy of respectively 0.19 eV and 0.36 eV. Correlat ion with PL measurements confirmed the association of the 0.36 eV leve l with a CiOi and/or CiCs complex. Isothermal anneals performed at 200 degrees C resulted in a gradual conversion of the E(v) +0.19 eV to a defect level at E(v) +0.24 eV. From the oxygen content dependence of t he transformation it is suggested that the divacancy diffuses and is t rapped by interstitial oxygen forming a V2O complex.