H. Werheit et al., CARBON IN BETA-RHOMBOHEDRAL BORON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 204-208
Carbon atoms in the beta-rhombohedral boron structure substitute for b
oron atoms at the polar sites of the B-12 icosahedra. The donor level
of the excess electron of carbon coincides with the upper valence band
, thus raising the hopping probability within this band. This assumpti
on is consistent with various experimental results. The ionisation ene
rgy of the intrinsic electron trapping levels is slightly different fo
r B-12 and B11C icosahedra. The photoconductivity and quotient spectra
of the reflectivities of differently doped samples indicate carbon-in
duced changes in the density of states within the energy bands.