ELECTRICAL CHARACTERISTICS OF OXYGEN PRECIPITATION RELATED DEFECTS INCZOCHRALSKI SILICON-WAFERS

Gate oxide integrity (GOI) tests, surface photovoltage and deep level transient spectroscopy of Czochralski silicon wafers reveal oxide degr adation at heavy precipitation, defect-controlled recombination lifeti me and defect-induced deep levels. Electron beam induced current measu rements on those wafers before and after intentional metal decoration reveal relatively shallow levels in the non-decorated state and deep l evels in the decorated state. It is shown that the actual contaminatio n level determines the usefulness of GOI tests for predicting material performance in device processing.