DETAILED ANALYSIS OF BETA-SIC FORMATION BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON

Authors
ROMANORODRIGUEZ A SERRE C CALVOBARRIO L PEREZRODRIGUEZ A MORANTE JR KOGLER R SKORUPA W
Citation
A. Romanorodriguez et al., DETAILED ANALYSIS OF BETA-SIC FORMATION BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 282-285
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
282 - 285
Database
ISI
SICI code
0921-5107(1996)36:1-3<282:DAOBFB>2.0.ZU;2-M
Abstract
The detailed characterization of beta-SiC formation in silicon by high dose carbon ion implantation is reported. A buried layer containing b eta-SiC precipitates of 7-10 nm in size is directly formed by implanti ng at 500 degrees C. The precipitates formed are almost perfectly alig ned with the silicon substrate, but they present incoherent interfaces to it, and are nearly free of defects. After implantation, the crysta llinity of beta-SiC precipitates is improved by an annealing step, alt hough their size remains unchanged.