FRACTAL ANALYSIS OF FIELD-INDUCED EFFECTS ON THIN-FILMS OF NICKEL

Citation
V. Srinivas et al., FRACTAL ANALYSIS OF FIELD-INDUCED EFFECTS ON THIN-FILMS OF NICKEL, Materials research bulletin, 31(2), 1996, pp. 197-205
Citations number
19
Categorie Soggetti
Material Science
Journal title
ISSN journal
00255408
Volume
31
Issue
2
Year of publication
1996
Pages
197 - 205
Database
ISI
SICI code
0025-5408(1996)31:2<197:FAOFEO>2.0.ZU;2-F
Abstract
Thin films of nickel deposited on mica substrates have been investigat ed using scanning tunneling microscopy (STM). The STM topograph repres ents a clear microscopically repeated structure on the nickel thin fil m surfaces. When a voltage pulse was applied normal to the film surfac e, large clusters which were present on the virgin sample fragmented i nto smaller similarly looking clusters. This surface topographic data analysis was carried out in terms of fractal dimension (D), which is a single parameter quantification (surface roughness) over many orders of magnitude. It is observed that the application of voltage pulse cha nges surface morphology quite drastically and restoration takes place in a few minutes. The present analysis in terms of fractal dimension o f the surface is in good agreement with expected changes in surface mo rphology.