ANALYSIS AND SIMULATION OF THE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS FOR LOW-TEMPERATURE OPERATION

Authors
HUANG LX WEI TL ZHENG JA
Citation
Lx. Huang et al., ANALYSIS AND SIMULATION OF THE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS FOR LOW-TEMPERATURE OPERATION, International journal of electronics, 80(1), 1996, pp. 21-33
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
80
Issue
1
Year of publication
1996
Pages
21 - 33
Database
ISI
SICI code
0020-7217(1996)80:1<21:AASOTC>2.0.ZU;2-D
Abstract
An analytical current gain model of polysilicon emitter bipolar transi stors for low-temperature operation based on the effective recombinati on method is presented. The model incorporates tunnelling of holes thr ough the interface oxide layer, the reduced mobility mechanism, bandga p narrowing and carrier freeze-out effects. The low-temperature curren t gain and its temperature dependence are analysed numerically. The re sults agree well with experimental data.