TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES

The initial degradation of II-VI light emitting devices, namely the (1 00) dark line defect formation in CdZnSe quantum well structures forme d during laser or light emitting diode (LED) operation, has been inves tigated. Optically degraded quantum well structures exhibiting dark li ne defects were investigated via transmission electron microscopy. The observable dislocation networks have been determined to be conglomera tions of dislocation loops confined to the quantum well region having an associated Burgers vectors of a[100] and a[010]. The discovery and identification of initial dark line defects may prove useful in identi fying the defect mechanism in II-VI light emitters. (C) 1995 American Institute of Physics.