LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES

Authors
FREILER M MCLANE GF KIM S LEVY M SCARMOZZINO R HERMAN IP OSGOOD RM
Citation
M. Freiler et al., LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES, Applied physics letters, 67(26), 1995, pp. 3883-3885
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
26
Year of publication
1995
Pages
3883 - 3885
Database
ISI
SICI code
0003-6951(1995)67:26<3883:LPOSFF>2.0.ZU;2-D
Abstract
Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum we ll material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching (MIE). Luminescence spectroscopy shows confinement of charge carriers to the features' center. The effe cts of rf power and etching time on the luminescence efficiency of the se features and its concomitant etch-induced damage are examined. (C) 1995 American Institute of Physics.