M. Freiler et al., LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES, Applied physics letters, 67(26), 1995, pp. 3883-3885
Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum we
ll material, with dimensions as small as 160 nm, have been fabricated
using magnetron reactive ion etching (MIE). Luminescence spectroscopy
shows confinement of charge carriers to the features' center. The effe
cts of rf power and etching time on the luminescence efficiency of the
se features and its concomitant etch-induced damage are examined. (C)
1995 American Institute of Physics.