TOTAL-REFLECTION X-RAY EXCITED PHOTOELECTRON-SPECTRA OF COPPER PHTHALOCYANINE THIN-LAYER ON SI WAFER

Photoelectron spectra of a Si wafer, on which copper phthalocyanine wa s evaporated with a thickness of 50 Angstrom, were measured using graz ing incidence x rays under a total reflection condition. It was observ ed that the backgrounds owing to inelastic electron scattering in soli ds were reduced. It was also observed that the substrate Si signal was removed and that surface signal was enhanced due to the total x-ray r eflection. Oxygen depth was determined using the angle dependence of t he x-ray photoelectron spectral intensity. (C) 1995 American Institute of Physics.