NITROGEN DOPING DURING ATOMIC LAYER EPITAXIAL-GROWTH OF ZNSE

This letter reports the growth and characterization of ZnSe:N layers b y atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The AL E-grown ZnSe:N layers have been investigated in terms of in situ refle ction high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concen tration in the ALE-grown layer has been obtained as high as 1.2X10(18) cm(-3) and the ALE layers of ZnSe:N show reduced number of compensati ng deep centers compared with the ZnSe:N grown by molecular beam epita xy. The effects of the Fermi level at a growing surface on the generat ion of compensating donors with a binding energy of 57 meV are also di scussed. (C) 1995 American Institute of Physics.