RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS

Authors
KANIAVA A ROTONDARO ALP VANHELLEMONT J MENCZIGAR U GAUBAS E
Citation
A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS, Applied physics letters, 67(26), 1995, pp. 3930-3932
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
26
Year of publication
1995
Pages
3930 - 3932
Database
ISI
SICI code
0003-6951(1995)67:26<3930:RAOICI>2.0.ZU;2-J
Abstract
Carrier recombination centers related with iron complexes in p-type si licon are studied by microwave and light-induced absorption techniques . Both thermal- and photoactivation are used to decompose iron-boron p airs and to study the impact on the recombination lifetime. Due to pho todissociation of iron-boron pairs the lifetime increases for high lev el injection. Efficient recombination occurs via an acceptor level at E(c)-0.29 eV as derived from the temperature dependence of carrier lif etime. (C) 1995 American Institute of Physics.