RADIATION-RESISTANCE OF INP-RELATED MATERIALS

Irradiation effects of 1-MeV electrons on InP-related materials such a s InP, InGaP and InGaAsP have been examined in comparison with those o f GaAs. Superior radiation-resistance of InP-related materials and the ir devices compared to Gaas has been found in terms of minority-carrie r diffusion length and properties of devices such as solar cells and l ight-emitting devices. Moreover, minority-carrier injection-enhanced a nnealing of radiation-induced defects in InP-related materials has als o been observed.