CHARACTERIZATION OF POLYSILICON-GATE DEPLETION IN MOS STRUCTURES

Authors
RICCO B VERSARI R ESSENI D
Citation
B. Ricco et al., CHARACTERIZATION OF POLYSILICON-GATE DEPLETION IN MOS STRUCTURES, IEEE electron device letters, 17(3), 1996, pp. 103-105
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
3
Year of publication
1996
Pages
103 - 105
Database
ISI
SICI code
0741-3106(1996)17:3<103:COPDIM>2.0.ZU;2-D
Abstract
This paper presents a new technique to characterize the depletion capa citance and (active) impurity concentration of gate polysilicon in MOS transistors. The method has been validated by means of 2-D simulation ; experimental results obtained with state-of-the-art n-channel 0.5 mi crometer transistors are presented.