HOT HOLE INDUCED INTERFACE STATE GENERATION AND ANNIHILATION IN SOI MOSFETS

Authors
SINHA SP ZALESKI A IOANNOU DE CAMPISI GJ HUGHES HL
Citation
Sp. Sinha et al., HOT HOLE INDUCED INTERFACE STATE GENERATION AND ANNIHILATION IN SOI MOSFETS, IEEE electron device letters, 17(3), 1996, pp. 121-123
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
3
Year of publication
1996
Pages
121 - 123
Database
ISI
SICI code
0741-3106(1996)17:3<121:HHIISG>2.0.ZU;2-P
Abstract
The effects of pure hot hole injection in SOI MOSFET's are investigate d, Pure hot hole injection is achieved by exploiting the opposite chan nel based carrier injection phenomenon, It is found that significant a mounts of interface states are generated, some of which are annihilate d by a subsequent hot electron injection pulse, A power law of the for m D-it(t) = Kt(n) with n close to 0.25 was obtained, indicating a more complex, diffusion limited, electrochemical reaction at the interface than previously reported.