A HIGH-CURRENT AND HIGH-TEMPERATURE 6H-SIC THYRISTOR

A 6H-SiC thyristor has been fabricated and characterized, A forward br eakover voltage close to 100 V and a pulse switched current density of 5200 A/cm(2) have been demonstrated, The thyristor is shown to operat e under pulse gate triggering for turn-on and turn-off, with a rise ti me of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperatur e is increased from room temperature to 300 degrees C. It is found tha t anode ohmic contact resistance dominates the device forward drop at high current densities.