B. Garni et al., SCANNING-TUNNELING-MICROSCOPY AND TUNNELING LUMINESCENCE OF THE SURFACE OF GAN FILMS GROWN BY VAPOR-PHASE EPITAXY, Applied physics letters, 68(10), 1996, pp. 1380-1382
We report scanning tunneling microscopy (STM) images of surfaces of Ga
N films and the observation of luminescence from those films induced b
y highly spatially localized injection of electrons or holes using STM
. This combination of scanning tunneling luminescence with STM for GaN
surfaces and the ability to observe both morphology and luminescence
in GaN is the first step to investigate possible correlations between
surface morphology and optical properties. (C) 1996 American Institute
of Physics.