CHARACTERIZATION OF INDIVIDUAL INTERFACE TRAPS WITH CHARGE-PUMPING

Charge pumping (CP) of individual interface traps has been studied in small field effect transistors. The amplitude of the CP current is fou nd to be quantized in units of qf, where f is the frequency of the app lied CP wave form, and each unit represents the response of a single t rap. The time dependence for emission of a trapped electron from a sin gle interface trap has also been measured with CP. The emission probab ility is found to increase exponentially with time, consistent with Sh ockley-Read-Hall statistics. We also compare the relative merits of ra ndom telegraph noise experiments and CP for characterizing individual interface traps. (C) 1996 American Institute of Physics.