PHOTOEMISSION OSCILLATION MEASUREMENT OF BARRIER THICKNESS FOR INAS ALSB RESONANT-TUNNELING DIODES/

AlSb barrier thicknesses ranging from 5 to 12 monolayers have been mea sured during growth of InAs/AlSb resonant tunneling structures using t he photoemission oscillation technique. A plot of peak current density as a function of both measured and estimated barrier thickness confir ms that use of the photoemission oscillation technique reduces device performance variations with respect to the conventional time-based app roach to layer thickness control. Our growth scheme involves a signifi cant As background pressure during the AlSb growth which results in in corporation of As in the barrier layer. We have modeled the effect of the As incorporation on device properties and find that our measured p eak current values are consistent with these calculations. (C) 1996 Am erican Institute of Physics.