ELECTRICAL CHARACTERISTICS OF AL A-C-H/N-SI DIODES USING CH4 AND CH4/CF4 AS THE GAS-SOURCE/

MIS diodes using as insulator a-C:H films, deposited by PECVD at room temperature with CH4 and CH4/CF4 as gas source were electrically chara cterized. The film thickness of the a-C:H obtained from CH4/CF4 gas mi xture is limited by high intrinsic compressive stress. The I vs V and C vs V diode curves show that films behave as undoped high resistivity layers; their typical resistivities are between 10(10)-10(12) Omega C M and the films also show the presence of slow and deep states. The MI S diodes fabricated using a CH4/CF4 gas mixture source exhibited a sig nificant change in the reverse breakdown voltage.