ANNEALING EFFECT OF VACUUM-EVAPORATED INSB THIN-FILMS

Authors
TOMISU M INOUE N YASUOKA Y
Citation
M. Tomisu et al., ANNEALING EFFECT OF VACUUM-EVAPORATED INSB THIN-FILMS, Vacuum, 47(3), 1996, pp. 239-242
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
47
Issue
3
Year of publication
1996
Pages
239 - 242
Database
ISI
SICI code
0042-207X(1996)47:3<239:AEOVIT>2.0.ZU;2-V
Abstract
A method of single-source vacuum evaporation for preparing InSb thin f ilms, having high electron mobilities onto glass substrates is studied . Electron mobilities of 6500 cm(2)/Vs in the 1.7 mu m thick InSb film is obtained by single-source vacuum evaporation followed-by capped an nealing. The effects of the source temperature, the substrate temperat ure and the post annealing conditions on electrical and crystal proper ties of the deposited films are discussed.