BAND-EDGE PROPERTIES OF A SEMICONDUCTOR ALLOY - AN NMR-STUDY OF HG1-XCDXTE

Citation
Jh. Shi et al., BAND-EDGE PROPERTIES OF A SEMICONDUCTOR ALLOY - AN NMR-STUDY OF HG1-XCDXTE, Physical review. B, Condensed matter, 48(12), 1993, pp. 8742-8746
Citations number
36
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
12
Year of publication
1993
Pages
8742 - 8746
Database
ISI
SICI code
0163-1829(1993)48:12<8742:BPOASA>2.0.ZU;2-#
Abstract
We report Hg-199 NMR measurements of narrow-gap Hg1-xCdxTe alloys in t he range x=0.20-0.28. By studying temperature dependences, we have ide ntified intrinsic Knight shifts in these alloys. This provides a measu re of Hg orbital contributions to conduction-electron states, and we f ind a consistently strong average contribution from Hg s orbitals. Fur thermore, we identify local variations in the Knight shift with spatia l variations in conduction-electron densities and symmetries. These ch aracteristics have been related to randomly populated sites within the alloys. We also discuss Hg-199 chemical shifts and their relation to local orbital charges.