SYMMETRY, STRESS ALIGNMENT, AND REORIENTATION KINETICS OF THE SI(AS)-H COMPLEX IN GAAS

The symmetry reorientation kinetics, and coupling of the ground-state energy to stress have been determined for the Si(As)-H complex in GaAs from uniaxial stress data. The stress-induced frequency shifts of the H-stretching vibration at 2094.5 cm-1 are consistent with trigonal sy mmetry for the defect. The application of stress at temperatures above 85 K gives rise to a preferential alignment of the defect. The reorie ntation of the complex is thermally activated with an activation energ y of 0.26 eV. The uniaxial stress data are consistent with the hydroge n atom being on the trigonal axis between the Si acceptor and a neares t-neighbor gallium atom.