ELECTRON-TUNNELING DYNAMICS THROUGH A DOUBLE-BARRIER STRUCTURE IN THEPRESENCE OF PHONONS

Electron-tunneling dynamics through a semiconcuctor double-barrier str ucture in the presence of plane-wave phonons is investigated by direct ly solving the time-dependent Schrodinger equation. The temporal profi le of tunneling current density due to an electron wave packet inciden t at the resonant energy channel E(r) is calculated at different latti ce temperatures. The magnitude of the tunneling current density is sho wn to decrease in the presence of the electron-phonon interaction, whi ch is attributed to an increase in the reflected current. The calculat ed tunneling peak current density is shown to decrease with temperatur e and is compared with available experimental data.