C. Schwennicke et al., ORDERING AND PHASE-DIAGRAMS OF XENON ADSORBED ON THIN EPITAXIAL NACL(100) FILMS AND ON GE(100), Physical review. B, Condensed matter, 48(12), 1993, pp. 8928-8937
An adsorption study of Xe on both the bare Ge(100) surface, as well as
on thin NaCl films grown pseudomorphically on Ge(100), was carried ou
t using high-resolution low-energy electron diffraction. Ordered phase
s and phase diagrams were investigated in quasiequilibrium with room-t
emperature gas. Starting from low pressures, a transition from a disor
dered lattice gas to a distorted hexagonal phase was found for Xe on N
aCl(100) in addition to the hexagonal bulk phase, which grows as a mul
tilayer phase. The distorted hexagonal phase was found to be commensur
ate with the substrate in only one direction. At lower temperatures an
d/or higher pressures, the onset of three-dimensional growth is observ
ed in the form of a hexagonal nanocrystalline phase (average grain siz
e 80 angstrom) with Xe bulk lattice constant which is still oriented a
long the [110] direction with one of its axes. Both phase transitions
are of first order, with pronounced hysteresis effects for the second.
On Ge(100), no additional superstructure spots are induced by Xe befo
re the bulk phase grows. The (2x1) reconstruction is maintained, but c
haracteristic jumps in intensity of integral order as well as of half-
order beams are observed as a function of temperature and pressure so
that Xe seems to lock on defined sites in (2x1) registry. Phase diagra
ms for Xe adsorbed on both surfaces were derived and heats of transiti
on at the phase boundaries were determined.