INFLUENCE OF PIEZOELECTRIC FIELDS ON RYDBERG ENERGIES IN (GA,IN)AS-GAAS SINGLE QUANTUM-WELLS EMBEDDED IN P-I-N STRUCTURES

We have performed a variational calculation of the heavy-hole exciton for (Ga,In)As-GaAs strained-layer quantum wells embedded in p-i-n stru ctures. The calculation has been made for sample growth along both the (001) and (111) directions. We show that the influence of the piezoel ectric field may sometimes lead to strong orientation-dependent proper ties. In particular, when piezoelectric fields are present, the radiat ive lifetimes of heavy-hole excitons are strongly dependent on the thi ckness of the (Ga,In)As layer.