POSITRON BINDING-ENERGIES AND SPECIFIC TRAPPING RATES FOR MONOVACANCIES IN GAAS AND INSB

Positron measurements on as-grown GaAs and InSb in the temperature ran ge 30-800 K have resulted in an experimental determination of the posi tron binding energies and absolute.specific trapping rate for monovaca ncies. In the case of GaAs the binding energy is found to be 0.30+/-0. 02 eV and the absolute specific trapping rate to be (1.0+/-0.2)X10(-17 ) ns-1 cm3. In the case of InSb the binding energy is constant (0.28+/ -0.02 eV) below approximately 540 K but increases to 0.60+/-0.05 eV cl ose to the melting point (823 K).