In previous reports, we predicted with computer simulation that photoc
arriers from blue bias light can contribute under certain conditions t
o the quantum efficiency in the red wavelength part of the spectrum fo
r hydrogenated amorphous silicon (a-Si:H) p-i-n and Schottky barrier s
tructures. We termed this phenomenon photogating and subsequently expe
rimentally verified its existence by demonstrating red wavelength quan
tum efficiency > 1 under blue bias light. In this report, we show how
device structure affects this photogating and affects the wavelength r
anges where it can appear. We show with computer simulations that cert
ain structures can display a complementary phenomenon of blue quantum
efficiencies > 1 under red bias light and discuss supporting experimen
tal data. (C) 1996 American Institute of Physics.