P-TYPE DOPING OF CDTE WITH A NITROGEN PLASMA SOURCE

We report here on the growth and the characterization of p-type CdTe g rown by molecular beam epitaxy on (001) Cd0.96Zn0.04Te substrates. Nit rogen has been used as a dopant, which is activated in an electron cyc lotron resonance plasma source. The carrier concentration was determin ed using a CN profiler. Nitrogen has been successfully incorporated su bstitutionally and hole densities up to 2.6 X 10(17) cm(-3) have been achieved. In addition we present data from x-ray diffraction and photo luminescence, which demonstrate the effect of self-compensation on the nitrogen-doped CdTe layers. (C) 1996 American Institute of Physics.