SPECIES AND DOSE DEPENDENCE OF ION-IMPLANTATION DAMAGE-INDUCED TRANSIENT ENHANCED DIFFUSION

The implant species and dose effects of ion implantation, including cr ossing the amorphization threshold, on the transient enhanced diffusio n (TED) behavior of a boron marker layer in silicon have been studied. It has been found that for lower implant doses, TED is species indepe ndent. However, for higher implanted doses, the dependence of TED on s pecies becomes very significant. It has been found that at these highe r doses, including amorphizing doses, P implants cause more TED than e ither Si or As implants. This result is explained based on the fully c oupled diffusion mechanism of the impurity dopants where dopants diffu se by temporarily pairing with point defects. Additionally, both point defect clusters and extended defects such as dislocations significant ly affect the dopant profile evolution of both the implanted profile a nd the buried marker layer. By modeling these effects, the experimenta l results have been simulated and a consistent parameter set has been found to fit the data to a reasonable extent. (C) 1996 American Instit ute of Physics.