FEMTOSECOND LASER EXCITATION DYNAMICS OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2

Citation
Mf. Becker et al., FEMTOSECOND LASER EXCITATION DYNAMICS OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2, Journal of applied physics, 79(5), 1996, pp. 2404-2408
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
5
Year of publication
1996
Pages
2404 - 2408
Database
ISI
SICI code
0021-8979(1996)79:5<2404:FLEDOT>2.0.ZU;2-7
Abstract
We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser p ulses. We have determined the dynamic response of the complex refracti ve index of polycrystalline VO2 thin-films by making pump-probe optica l transmission and reflection measurements at 780 nm. The phase transi tion was found to be largely prompt with the optical properties very c lose to the high-temperature metallic state being attained within abou t 5 ps. The equilibration of the metallic state after femtosecond exci tation was modeled by non-exponentially decaying perturbations in the metallic state electron density and collision frequency. The decay of both these plasma parameters was well fit by a 1/root t time dependenc e. This indicated that a diffusion process governed the equilibration of the metallic phase of VO2. (C) 1996 American Institute of Physics.