MONTE-CARLO STUDY OF THE KICKOUT MECHANISM OF BORON-DIFFUSION IN SILICON

In this article, the results of a study of the diffusion mechanism of boron in silicon based on the Monte Carlo method are presented. The ki ckout mechanism has been examined for the case of a delta function imp urity profile under both inert and oxidation conditions. It is shown t hat the initial conditions play a significant role in obtaining the me an migration path lengths of the atoms. The kickout mechanism in the c ase of an initial delta function interstitial impurity profile has bee n analytically examined. The atomic level computational experiments ca rried out in this article validate Cowern's results of ''intermittent diffusion'' of boron in silicon and yield, the values for lambda(0), t he prefactor for the mean migration path length, which are found to li e between 0.024 and 0.035 nm. (C) 1996 American Institute of Physics.