GROWTH OF GIANT MAGNETORESISTANCE SPIN VALVES USING INDIUM AS A SURFACTANT

We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni80Fe 20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from similar to 0.8 to similar to 0.3 mT, presumably by suppressing roughness at t he Co/Cu/Co interfaces, when 0.5-1.0 nm In is deposited on the first C o film just prior to Cu deposition or on the Cu film just prior to dep osition of the second Co film. The In has a strong tendency to float-o ut to the surface during deposition of the spin valve leaving the spin -valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 i nterface can be increased from 12 to 25 mT by the use of thicker In (1 .4 nm).