ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE

Citation
A. Bsiesy et al., ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Journal of applied physics, 79(5), 1996, pp. 2513-2516
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
5
Year of publication
1996
Pages
2513 - 2516
Database
ISI
SICI code
0021-8979(1996)79:5<2513:OOTCAD>2.0.ZU;2-#
Abstract
The origin of the electronic free charge carriers accumulation/depleti on in the porous silicon skeleton contacted with an electrolyte is det ermined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carriers flux supplied by the substrate is not the rate determining step of th e electrical current conduction. (C) 1996 American Institute of Physic s.