A. Bsiesy et al., ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Journal of applied physics, 79(5), 1996, pp. 2513-2516
The origin of the electronic free charge carriers accumulation/depleti
on in the porous silicon skeleton contacted with an electrolyte is det
ermined by investigating the limiting step in the conduction process.
Experimental evidences, supported by quantitative considerations, show
that the porous silicon can be conductive if the free charge carriers
flux supplied by the substrate is not the rate determining step of th
e electrical current conduction. (C) 1996 American Institute of Physic
s.