Using dark-field transmission electron microscopy images of ordered Ga
InP samples, we show how the ordering domain size depends on the growt
h temperature. Samples with different average domain sizes are compare
d with regard to their photoluminescence (PL) and excitation spectra.
We find a close correlation between the size of the ordered domains an
d the relative intensity of the PL peak from band-band recombination c
ompared with the rapidly shifting, below-band-gap luminescence emissio
n. (C) 1996 American Institute of Physics.