STRUCTURAL AND OPTICAL CHARACTERIZATION OF MONOLAYER INTERFACES IN GA0.47IN0.53AS INP MULTIPLE-QUANTUM WELLS GROWN BY CHEMICAL BEAM EPITAXY/

We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam e pitaxy using a well-defined sequence of growth interruption times betw een successive layers. These growth interruption times result in the f ormation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis o f double-crystal x-ray diffraction data reveals that exposure of InP t o arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga0 .47In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphi ne for 2 s results in the formation of approximately 2 monolayers of G a0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, p hotoluminescence and absorption spectroscopy data reveal the negligibl e effect of InAsxP1-x and GaxIn1-xAsyP1-y interfacial layers on the em ission and optical absorption properties of Ga0.47In0.53As/InP multipl e quantum wells with sufficiently thick Ga0.47In0.53As layers. (C) 199 6 American Institute of Physics.