Kp. Clark et al., MINORITY-CARRIER MAGNETO-OSCILLATIONS IN THE BIPOLAR QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR, Journal of applied physics, 79(5), 1996, pp. 2732-2737
Magneto-oscillations due to a minority carrier two-dimensional electro
n gas (2DEG) in the base of a bipolar quantum well resonant tunneling
transistor at liquid helium temperatures are reported, we believe, for
the first time. These are attributed to a high-density 2DEG formed in
the 20 nm undoped setback layer between the base and emitter. The 2DE
G density has a nonmonotonic dependence on the emitter/base junction b
ias, increasing to a maximum at flatband conditions, then decreasing a
t higher bias. Associated lateral electron diffusion dominates recombi
nation such that the current gain can increase 1000 times in a 6 T mag
netic field. (C) 1996 American Institute of Physics.