P. Shah et al., NUMERICAL-SIMULATION OF WIDE BAND-GAP ALGAN INGAN LIGHT-EMITTING-DIODES FOR OUTPUT POWER CHARACTERISTICS AND EMISSION-SPECTRA/, Journal of applied physics, 79(5), 1996, pp. 2755-2761
We present results from numerical simulations of AlGaN/InGaN double-he
terostructure light-emitting diodes. A highly convergent, fast, and me
mory efficient algorithm necessary for wide band-gap device simulation
was developed and is described here. Charge carrier tunneling current
s and a band to impurity recombination mechanism are included. The res
ults compare favorably to experimental results. The results demonstrat
e that the saturation of power at high currents, the high rate of incr
ease in currents at high voltages, and the reduced broadening of the o
ptical emission spectrum at high biases, with only band-to-acceptor re
combination occurring in the active region, are due to carriers leavin
g the active region by thermionic emission rather than recombining. (C
) 1996 American Institute of Physics.