ANALYTICAL SOLUTION OF THE BREAKDOWN VOLTAGE FOR 6H-SILICON CARBIDE P(+)N JUNCTION

Authors
BYEON DS HAN MK CHOI YI
Citation
Ds. Byeon et al., ANALYTICAL SOLUTION OF THE BREAKDOWN VOLTAGE FOR 6H-SILICON CARBIDE P(+)N JUNCTION, Journal of applied physics, 79(5), 1996, pp. 2796-2797
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
5
Year of publication
1996
Pages
2796 - 2797
Database
ISI
SICI code
0021-8979(1996)79:5<2796:ASOTBV>2.0.ZU;2-J
Abstract
An analytical solution of the breakdown voltage for 6H-silicon carbide p(+)n junction has been derived by employing an effective ionization coefficient. The breakdown voltage extracted from our analytical model agrees fairly well with the experimental data in the range of 10(16)- 10(18) cm(-3)doping levels. (C) 1996 American Institute of Physics.