Ds. Byeon et al., ANALYTICAL SOLUTION OF THE BREAKDOWN VOLTAGE FOR 6H-SILICON CARBIDE P(+)N JUNCTION, Journal of applied physics, 79(5), 1996, pp. 2796-2797
An analytical solution of the breakdown voltage for 6H-silicon carbide
p(+)n junction has been derived by employing an effective ionization
coefficient. The breakdown voltage extracted from our analytical model
agrees fairly well with the experimental data in the range of 10(16)-
10(18) cm(-3)doping levels. (C) 1996 American Institute of Physics.