SCALING OF ISLAND GROWTH IN PB OVERLAYERS ON CU(001)

Citation
W. Li et al., SCALING OF ISLAND GROWTH IN PB OVERLAYERS ON CU(001), Physical review. B, Condensed matter, 48(11), 1993, pp. 8336-8344
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
11
Year of publication
1993
Pages
8336 - 8344
Database
ISI
SICI code
0163-1829(1993)48:11<8336:SOIGIP>2.0.ZU;2-I
Abstract
The growth and ordering of a Pb layer deposited on Cu(001) at 150 K ha s been studied using atom beam scattering. At low coverage, ordered Pb islands with (sqaure-root 61 x square-root 61)R tan-1 (5/6) symmetry are formed. This is a high-order commensurate phase with 30 atoms in t he unit cell. From the measurement of the island diffraction peak prof iles we find a power law for the mean island size versus coverage with an exponent n = 0.54 +/- 0.03. A scaling behavior of growth is confir med and a simple model describing island growth is presented. Due to t he high degeneracy of the monolayer phase, different islands typically diffract incoherently. Therefore, when islands merge they still diffr act as separate islands and coalescence effects are thus suppressed. F rom the result for n we conclude that the island density is approximat ely a constant in the coverage range 0.1 < THETA < 0.5 where the order ed islands are observed [THETA is defined as the ratio between the num ber of Pb atoms and the number of Cu atoms in the underlying Cu(001) l ayer]. We thus conclude that most islands nucleate at THETA < 0.1 and then grow in an approximately self-similar fashion as THETA increases.