INDIUM DIFFUSION INSIDE INBI DURING AND AFTER ELECTRODEPOSITION AT VARIOUS TEMPERATURES

Citation
S. Canegallo et al., INDIUM DIFFUSION INSIDE INBI DURING AND AFTER ELECTRODEPOSITION AT VARIOUS TEMPERATURES, Journal of alloys and compounds, 234(2), 1996, pp. 211-217
Citations number
14
Categorie Soggetti
Chemistry Physical","Metallurgy & Metallurigical Engineering","Material Science
ISSN journal
09258388
Volume
234
Issue
2
Year of publication
1996
Pages
211 - 217
Database
ISI
SICI code
0925-8388(1996)234:2<211:IDIIDA>2.0.ZU;2-H
Abstract
The influence of temperature on indium galvanostatic electrodeposition from aqueous solutions on bismuth cathodes has been investigated, as well as the time evolution of the deposit composition. The formation o f In-Bi intermetallic compounds was observed owing to indium diffusion into, and reaction inside, the bulk of the cathode. By considering th e charge transfer and mass transport phenomena, we estimated the In di ffusion coefficient into InBi at 30 to 70 degrees C (from 0.79 x 10(-1 5) to 3.77 x 10(-15) m(2) s(-1)) and from applying an Arrhenius-type r elation, we estimated the activation energy (32.8 kJ mol(-1)) and freq uency factor (3.7 x 10(-10) m(2) s(-1)).