RESONANT RAMAN-SCATTERING IN INSB IN1-XALXSB SUPERLATTICES/

Resonant Raman scattering was used to probe the electronic structure o f InSb/In1-xAlxSb strained-layer superlattices in the region of the E1 and E1 + DELTA1 optical gaps. The two sets of peaks observed in the p lots of the Raman cross section versus photon energy are shown to orig inate from the independent electronic transitions in the alternating l ayers. Estimates of the strain and confinement effects were made and t hese agree with the observed differences from bulk material.