A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR BASED ON THE BOLTZMANN TRANSPORT-EQUATION

A fast simulator for electron beam lithography exposure, based on the Boltzmann transport equation is proposed. Using LITHOS (LITHOgraphy Si mulator) it is possible to calculate various important parameters whic h are useful in performing proximity corrections in e-beam lithography and to predict the resist profile after development. This method is p roposed as an alternative to the more common Monte Carlo approach as b eing much faster since it is based on the calculation of analytical ex pressions. The results obtained by the analytical model are compared t o existing experimental results and to those obtained by other methods . The case of a multilayer sample is considered as being of importance in electron beam patterning. All important phenomena (backscattering, secondary electrons) are included in the calculations.