NONEQUILIBRIUM ELECTRON DISTRIBUTIONS AND HIGH-FIELD ELECTRON-TRANSPORT IN AN ALXGA1-XAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTOR - A PICOSECOND RAMAN PROBE

Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructur e semiconductor under the application of an electric field has been st udied at T = 80 K by picosecond transient Raman spectroscopy, Single-p article excitations associated with spin-density fluctuations were use d to directly measure electron distribution functions and drift veloci ties under various electric field intensities, Extremely nonequilibriu m electron distributions were observed, Specifically, for an injected carrier density of n congruent to 1 x 10(18) Cm-3, a drift velocity V- d as high as 2.5 x 10(7) cm/s was measured for an electric field inten sity E = 18 kV/cm, These experimental results are in good agreement wi th Ensemble Monte Carlo calculations.