HIGH-POWER LINEAR SILICON MOSFET FOR 820-APPROXIMATE-TO-960 MHZ BASE STATION APPLICATION

Authors
TANAKA W SARKISSIAN G KATO H OHBATA N KOSE Y
Citation
W. Tanaka et al., HIGH-POWER LINEAR SILICON MOSFET FOR 820-APPROXIMATE-TO-960 MHZ BASE STATION APPLICATION, NEC research & development, 37(1), 1996, pp. 8-12
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
NEC research & development → ACNP
ISSN journal
0547051X
Volume
37
Issue
1
Year of publication
1996
Pages
8 - 12
Database
ISI
SICI code
0547-051X(1996)37:1<8:HLSMF8>2.0.ZU;2-O
Abstract
A high-power linear silicon CW MOSFET has been developed for use in ba se station amplifiers in the 820 to 960 MHz frequency range. The trans istor has a saturation power P-sat level of 100 W, and features over 1 2 dB of linear gain with 45% drain efficiency and a low intermodulatio n distortion level. It is operated in push-pull mode with class AB bia s.