CHEMICAL-DEPOSITION OF CDSE THIN-FILMS - PHOTOELECTROCHEMICAL APPLICATIONS

Citation
Cs. Shahane et al., CHEMICAL-DEPOSITION OF CDSE THIN-FILMS - PHOTOELECTROCHEMICAL APPLICATIONS, Indian Journal of Pure & Applied Physics, 34(3), 1996, pp. 153-157
Citations number
21
Categorie Soggetti
Physics
ISSN journal
00195596
Volume
34
Issue
3
Year of publication
1996
Pages
153 - 157
Database
ISI
SICI code
0019-5596(1996)34:3<153:COCT-P>2.0.ZU;2-7
Abstract
A study has been undertaken to investigate the thin film and photoacti ve properties of chemically deposited CdSe thin films. The deposition has been carried out in an alkaline medium at 55 degrees C for 75 min. The electrical conductivity, activation energy of electrical conducti on, thermoelectric power and optical energy density have been measured . At room temperature, the electrical conductivity of the order of 10( -6) (ohm cm)(-1) and an optical energy gap of 1.74 eV with a direct ty pe of transition have been noticed. The thermoelectric power (TEP) mea surements show n-type conduction. A CdSe/sulphide-polysulphide/C elect rochemical cell has been constructed and its photoactive properties ha ve been studied. These characteristics have been analysed to determine the various performance parameters of a cell.