N-14 DEPTH DISTRIBUTION MEASUREMENTS FOR ULTRATHIN DIELECTRIC FILMS ON SILICON(100)

Nuclear reaction analysis has been employed to study the composition o f thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N2O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both grow th time and oxide thickness, Most nitrogen is incorporated into the fi lm at an early stage; the presence of a nitrogen-rich region formed du ring this stage appears to retard further nitridation and oxidation. T he nitrogen depth distribution in oxynitride films prepared by the rap id thermal processing technique is compared to that measured for a fur nace-grown film.