VISIBLE ELECTROLUMINESCENCE FROM SI-IMPLANTED SIO2-FILMS THERMALLY GROWN ON CRYSTALLINE SI()

Authors
LIAO LS BAO XM LI NS ZHENG XQ MIN NB
Citation
Ls. Liao et al., VISIBLE ELECTROLUMINESCENCE FROM SI-IMPLANTED SIO2-FILMS THERMALLY GROWN ON CRYSTALLINE SI(), Solid state communications, 97(12), 1996, pp. 1039-1042
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
97
Issue
12
Year of publication
1996
Pages
1039 - 1042
Database
ISI
SICI code
0038-1098(1996)97:12<1039:VEFSST>2.0.ZU;2-1
Abstract
Thermally grown SiO2 films on p-type crystalline Si wafers were implan ted with Si+, and metal-insulator-semiconductor (MIS) structures were fabricated with a semitransparent Au layer on the top of the SiO2 film s. The MIS structures exhibit electroluminescence (EL) under forward b ias. The EL spectrum has a main peak at similar to 2.0 eV and a should er at similar to 1.7 eV, which is similar to the photoluminescence of the same implanted SiO2 films. The EL mechanism is also discussed.