PHASE-TRANSITIONS AND NONMETALLIC TEMPERATURE-DEPENDENCE OF CONDUCTION ELECTRON-SPIN-RESONANCE LINE-WIDTH IN QUASI-2-DIMENSIONAL SYNTHETIC METAL C15HNO3

In the synthetic metal C15HNO3 during and after crystallization of the HNO3 ''guest'' molecules, the simultaneous increase of conductivity, conduction electron spin resonance (CESR) line width and spin carriers concentration (N) was found and investigated. The increase of N is di rectly connected with the partial localization of the conduction pi-el ectrons (in terms of graphite intercalation compounds tight binding mo del). Since the localized electrons are the perturbation centres for t he conduction electrons, it has been proposed that the increase of the ir concentration is the main reason for the decrease of the in-plane s pin carriers mobility and the ''nonmetallic'' increase of the CESR lin e width observed during and after crystallization of the HNO3 ''guest' ' layers.